PL2301GD

PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V -1.4 170 @ VGS= 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 V Drain Current-Continuousa@ TA= 25 °C b -Pulse Drain-Source Diode Forward Current a Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range ID IDM IS PD TJ,TSTG -2.2 -6 -0.75 1.25 0.75 - 55 to 150 A A A W °C THERMAL CHARACTERISTICS a Thermal Resistance,Junction-to-Ambient RthJA 100 °C/W Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. 1 PULAN TECHNOLOGY CO., LIMITED PL2301GD ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS = -20V , VGS = 0V -1 uA Gate-Body Leakage b ON CHARACTERISTICS IGSS VGS = ±8V , VDS = 0V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID = -250uA -0.45 -0.65 -0.95 V Drain-Source On-State Resistance RDS(on) VGS = -4.5V , ID = -2.8A VGS = -2.5V , ID = -2.0A b DRAIN-SOURCE DIODE CHAR...