N-Channel MOSFET
SUP/SUB70N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.010...
Description
SUP/SUB70N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V
ID (A)
70 58
TO-220AB
TO-263
DRAIN connected to TAB
GDS Top View SUP70N04-10
G DS Top View
SUB70N04-10
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range
TC = 25_C TC = 100_C
L = 0.1 mH TC = 25_C
VDS VGS
ID
IDM IAR EAR PD TJ, Tstg
40 "20 70 47 140 60 180 107b –55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case
PCB Mount (TO-263)c Free Air (TO-220)
Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface mounted on 1” FR4 board.
Document Number: 70783 S-05110—Rev. D, 10-Dec-01
Symbol
RthJA RthJC
Typical
35 45 1.2
Maximum
40 50 1.4
Unit
_C/W
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SUP/SUB70N04-10
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
V(BR)DSS VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
rDS(on) gfs
VGS = 0 V, ID = 250 mA VDS = VGS, IDS = ...
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