SUP70N04-10

SUP/SUB70N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A) 70 58 TO-220AB TO-263 DRAIN connected to TAB GDS Top View SUP70N04-10 G DS Top View SUB70N04-10 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C L = 0.1 mH TC = 25_C VDS VGS ID IDM IAR EAR PD TJ, Tstg 40 "20 70 47 140 60 180 107b –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mount (TO-263)c Free Air (TO-220) Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface mounted on 1” FR4 board. Document Number: 70783 S-05110—Rev. D, 10-Dec-01 Symbol RthJA RthJC Typical 35 45 1.2 Maximum 40 50 1.4 Unit _C/W www.vishay.com 2-1 SUP/SUB70N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) Drain-Source On-State Resistancea Forward Transconductancea Dynamicb rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, IDS = ...