KSX13003C Series
KSB13003C KSU13003C
NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A
General Descriptio...
KSX13003C Series
KSB13003C KSU13003C
NPN Silicon Power
Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A
General Description
High voltage, High speed power switching Suitable for Electronic Ballast up to 21W
Features
VCBO = 800V VCEO = 450V VBEO = 9V IC = 1.5A
TO-92
TO-251
3 2 1
3
2 1
Ordering Information
Ordering number
KSB13003C KSB13003CR KSU13003C KSU13003CR
Package
TO-92 TO-92 TO-251 TO-251
Pin Assignment 123 BCE ECB BCE ECB
Packing
Ammo Ammo Tube Tube
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KSX13003C Series
KSB13003C KSU13003C
NPN Silicon Power
Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A
Absolute Maximum Ratings TC=25 unless otherwise noted
CHARACTERISTICS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO
IC ICP IB PC TJ TSTG
TO-92 1.1
RATING
800 450
9 1.5 3 0.75
150 -65~150
TO-251 25
UNIT
V V V A A A W
Electrical Characteristics TC=25 unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Base Breakdown Voltage
VCBO
IC=500ȝA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA, IB=0
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1 hFE2
VCE=5V,IC=0.2A VCE=5V,IC=1A
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
*Base-Emitter Saturation Voltage
VBE(sat)
IC=0.5A,IB=0.1A
Output Capacitance
Cob VCB=10V, f=0....