HRO400N10K

HRO400N10K Jan 2016 HRO400N10K 100V N-Channel Trench MOSFET Features ‰ High Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ Value 100 6.3 33 Unit V A Pȍ Application ‰ Power Management in Inverter System ‰ Synchronous Rectification Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25୅ TA = 70୅ Operating and Storage Temperature Range 100 ρ20 6.3 5.0 25 60 3.1 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJL Junction-to-Lead Junction-to-Ambient (t”10s) RșJA Junction-to-Ambient (steady state) Typ. ---- Max. 24 40 75 Units ୅/W ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡ HRO400N10K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6.3 A 2.0 -- gFS Forward Transconductance Off Characteristics VDS = 5, ID = 6.3 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 80 V, VGS = 0 V VDS = 80 V, TJ...