HRLU120N10H

HRLU120N10H Fab 2016 HRLU120N10H 100V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capability ‰ Enhanced Avalanche Ruggedness ‰ 100% UIS Tested, 100% Rg Tested ‰ Lead free, Halogen Free Application ‰ Synchronous Rectification in SMPS ‰ Hard Switching and High Speed Circuit ‰ DC/DC in Telecoms and Inductrial Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.5V Value 100 73 9.5 11.5 Unit V A Pȍ Pȍ Package & Internal Circuit I-PAK G D S Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ Single Pulsed Avalanche Energy L=0.1mH Power Dissipation TC= 25୅ Operating and Storage Temperature Range 100 ρ20 73 52 190 22 125 -55 to +175 Units V V A A A mJ W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.2 62.5 Units ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΒΓ͑ͣͧ͑͢͡ HRLU120N10H Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 5, ID = 20 A 1.0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Volta...