Document
HRLP43N06H
April 2016
HRLP43N06H
60V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free
Application
Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools UPS, Motor Control
Key Parameters
Parameter BVDSS ID
RDS(on), typ @10V RDS(on), typ @4.5V
Value 60 140 3.6 4.6
Unit V A Pȍ Pȍ
Package & Internal Circuit
TO-220
G D S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25 TC = 100
Single Pulsed Avalanche Energy
L=0.1mH
Power Dissipation
TC= 25
Operating and Storage Temperature Range
60 ρ20 140 100 410 211 176 -55 to +175
Units V V A A A mJ W
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 0.85 62.5
Units /W /W
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HRLP43N06H
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 5, ID = 20 A
1.0 ----
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 60 V, VGS = 0 V VDS = 60 V, TJ = 100 VGS = ρ20 V, VDS = 0 V
60 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 30 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time
VDS = 30 V, ID = 20 A, RG = 10
Qg (10V) Qg (4.5V)
Qgs Qgd
Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 30 V, ID = 20 A, VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
---------
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 20 A, VGS = 0 V diF/dt = 300 A/ȝV
------
-- 3.0 V 3.6 4.3 m 4.6 6.0 m
42 --
S
-- -- V -- 1 Ꮃ -- 100 Ꮃ -- ρ100 Ꮂ
3250 1200
50 1.6
-----
Ꮔ Ꮔ Ꮔ
12 -- Ꭸ 10 -- Ꭸ 55 -- Ꭸ 15 -- Ꭸ 49 -- nC 24 -- nC 8 -- nC 9 -- nC
-- 140 -- 410 0.9 1.2 50 -120 --
A
V Ꭸ nC
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HRLP43N06H
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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HRLP43N06H
Typical Characteristics (continued)
Figure 7. On-Resistance Variation vs Gate-Source Voltage
Normalized On-Resistance
2.2 I = 20A
D
2.0
1.8
1.6
V = 10V GS VGS = 4.5V
1.4
1.2
1.0
0.8 0 25 50 75 100 125 150 175 200
Temperature (oC)
Figure 8. On-Resistance Variation vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
Figure 11. Transient Thermal Response Curve
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HRLP43N06H
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF 300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V 10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID RG
L VDD
BVDSS IAS
EAS =
--1-2
LL IAS2
ID (t)
DUT
VDD
tp
VDS (t) Time
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HRLP43N06H
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS _
IS L
Driver RG
VGS
Same Type as DUT
• dv/dt controlled by RG • IS controlled by pulse period
VDD
VGS ( Driver )
IS ( DUT )
VDS ( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h-Gate Pulse Period
10V
IFM , Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode Forward Voltage Drop
VDD
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HRLP43N06H
Package Dimension
{vTYYWG
9.90±0.20
ij±0.20
4.50±0.20
1.30±0.20
6.50±0.20
15.70±0.20 2.80±0.20
9.19±0.20
13.08±0.20
1.27±0.20 1.52±0.20
2.54typ 2.54typ
2.40±0.20
3.02±0.20
0.80±0.20
0.50±0.20
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