N-Channel Trench MOSFET
HRLP150N10K
HRLP150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Tech...
Description
HRLP150N10K
HRLP150N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V 100% Avalanche Tested
Mar 2016
BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25) - Derate above 25
100 70 49 245 ρ25 190 13.6 136 0.9
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.5 --
Max. 1.1 -62.5
Units /W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝;ΒΣ͑ͣͧ͑͢͡
HRLP150N10K
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
Off Ch...
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