JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB000CT-B SCHOTTKY BARRIER ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB000CT-B
SCHOTTKY BARRIER RECTIFIER
FEATURE
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop
TO-263-2L
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VRRM VRWM VR(RMS) IO IFSM
PD
RθJA
TJ Tstg
Parameter Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current @8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient Junction temperature
Storage temperature
Value
200
140 20 150 2 50 125 -55~+150
Unit
V
V A A W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
=V(BR) IR 0.1mA
200
Reverse current
=IR VR 200V
)RUZDUGYROWDJH=VF* IF 10A
Total capacitance *Pulse test
==Ctot VR 4V,f 1MHz
Typ 110
Max
0.1 0.92
Unit V mA V
pF
www.cj-elec.com
1
A-1,May,2015
Typical Characteristics
FORWARD CURRENT I (uA) F
20000 10000
Forward Characteristics
1000
100
=25℃
=100℃
10
T a
T a
1 0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE V (mV) F
Capacitance Characteristics
400
T =25℃ a
350 f=1MHz
300
250
200
150
100
50
0 0 1 2 3 4 5 6 7 8 9 10
REVERSE VOLTAG...
