K4N56163QF-GC

K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 2.0 Oct. 2005 K4N56163QF-GC 256M gDDR2 SDRAM Revision History Revision Month Year 0.0 April 2004 1.0 October 2004 1.1 December 2004 1.2 December 2004 1.3 January 2005 1.4 February 2005 1.5 March 2005 1.6 April 2005 1.7 April 2005 1.8 May 2005 1.9 July 2005 2.0 October 2005 History - Target Spec - Defined Target Specification - DC spec defined. - Changed VDD&VDDQ of K4N56163QF-GC20/22 from 1.8V+0.1V to 2.0V+0.1V - Changed ICC2P and...