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UTC9012

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PNP EPITAXIAL SILICON TRANSISTOR

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATUR...


UTC

UTC9012

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UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING Collector-base voltage VCBO -40 Collector-emitter voltage VCEO -20 Emitter-base voltage VEBO -5 Collector current Ic -500 Collector dissipation Pc 625 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -40 Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 Collector cutoff current ICBO VCB=-25V,IE=0 Emitter cutoff current IEBO VEB=-3V,IC=0 DC current gain hFE1 VCE=-1V,Ic=-50mA 64 hFE2 VCE=-1V,Ic=-500mA 40 Collector-emitter saturation voltage VCE(sat) Ic=-500mA,IB=-50mA Base-emitter saturation voltage VBE(sat) Ic=-500mA,IB=-50mA Base-emitter on voltage VBE(on) VCE=-1V,Ic=-10mA -0.6 TYP 120 90 -0.18 -0.95 -0.67 MAX -100 -100 300 -0.6 -1.2 -0.7 UNIT V V V nA nA V V V CLASSIFICATION OF hFE1 RANK D E RANGE 64-91 78-112 F 96-135 G 112-166 H 144-202 I 190-300 UTC UNISONIC TECHNOLOGIES CO....




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