UTC 9012
PNP EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
FEATUR...
UTC 9012
PNP EPITAXIAL SILICON
TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-40
Collector-emitter voltage
VCEO
-20
Emitter-base voltage
VEBO
-5
Collector current
Ic -500
Collector dissipation
Pc 625
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT V V V mA
mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=-100µA,IE=0
-40
Collector-emitter breakdown voltage BVCEO
Ic=-1mA,IB=0
-20
Emitter-base breakdown voltage
BVEBO
IE=-100µA, Ic=0
-5
Collector cutoff current
ICBO
VCB=-25V,IE=0
Emitter cutoff current
IEBO
VEB=-3V,IC=0
DC current gain
hFE1
VCE=-1V,Ic=-50mA
64
hFE2
VCE=-1V,Ic=-500mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=-500mA,IB=-50mA
Base-emitter saturation voltage
VBE(sat)
Ic=-500mA,IB=-50mA
Base-emitter on voltage
VBE(on)
VCE=-1V,Ic=-10mA
-0.6
TYP
120 90 -0.18 -0.95 -0.67
MAX
-100 -100 300
-0.6 -1.2 -0.7
UNIT V V V nA nA
V V V
CLASSIFICATION OF hFE1
RANK
D
E
RANGE
64-91
78-112
F 96-135
G 112-166
H 144-202
I 190-300
UTC
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