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UTC9013 Dataheets PDF



Part Number UTC9013
Manufacturers UTC
Logo UTC
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet UTC9013 DatasheetUTC9013 Datasheet (PDF)

UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 5 Collector cur.

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UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 5 Collector current Ic 500 Collector dissipation Pc 625 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=100µA, IE=0 40 Collector-emitter breakdown voltage BVCEO Ic=1mA, IB=0 20 Emitter-base breakdown voltage BVEBO IE=100µA, Ic=0 5 Collector cutoff current ICBO VCB=25V, IE=0 Emitter cutoff current IEBO VEB=3V, IC=0 DC current gain hFE1 VCE=1V,Ic=50mA 64 hFE2 VCE=1V,Ic=500mA 40 Collector-emitter saturation voltage VCE(sat) Ic=500mA, IB=50mA Base-emitter saturation voltage VBE(sat) Ic=500mA, IB=50mA Base-emitter on voltage VBE(on) VCE=1V, Ic=10mA 0.6 TYP 120 120 0.16 0.91 0.67 MAX 100 100 300 0.6 1.2 0.7 UNIT V V V nA nA V V V CLASSIFICATION OF hFE1 RANK D E RANGE 64-91 78-112 F 96-135 G 112-166 H 144-202 I 190-300 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-030,A UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-030,A .


DS3153 UTC9013 UTC9012


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