Document
UTC 9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW) *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012
1
TO-92
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
5
Collector current
Ic 500
Collector dissipation
Pc 625
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT V V V mA
mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=100µA, IE=0
40
Collector-emitter breakdown voltage BVCEO
Ic=1mA, IB=0
20
Emitter-base breakdown voltage
BVEBO
IE=100µA, Ic=0
5
Collector cutoff current
ICBO
VCB=25V, IE=0
Emitter cutoff current
IEBO
VEB=3V, IC=0
DC current gain
hFE1
VCE=1V,Ic=50mA
64
hFE2
VCE=1V,Ic=500mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=500mA, IB=50mA
Base-emitter saturation voltage
VBE(sat)
Ic=500mA, IB=50mA
Base-emitter on voltage
VBE(on)
VCE=1V, Ic=10mA
0.6
TYP
120 120 0.16 0.91 0.67
MAX
100 100 300
0.6 1.2 0.7
UNIT V V V nA nA
V V V
CLASSIFICATION OF hFE1
RANK
D
E
RANGE
64-91
78-112
F 96-135
G 112-166
H 144-202
I 190-300
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-030,A
UTC 9013
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R201-030,A
.