3FT1T3

R TRIACS 3FT1T3 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 1.0A 600V/800V 5mA APPLICATIONS z z z AC switching z Phase control FEATURES z ， z z RoHS z Glass-passivated mesa chip for reliability and uniform z Low on-state voltage and High ITSM z RoHS products Package Pin 1 2 3 Description 1 MT1 G 2 MT2 TO-92 ORDER MESSAGES Order code Marking 3FT1T3-O-T-N-C 3FT1T3 3FT1T3-O-T-B-A 3FT1T3 Package TO-92 TO-92 Packaging Bag Tape ：201510B 1/6 R 3FT1T3 ABSOLUTE RATINGS (TC=25℃) Parameter Symbol Condition Repetitive peak off-state voltage VDRM On-state RMS current IT(RMS) full sine wave Non- full sine wave ,t=20ms repetitive surge peak on-state current ITSM full sine wave ,t=16.7ms I2t t=10ms Value Unit ±600 ±800 V 1.0 A 16 A 17.6 1.28 A A2s Repetitive rate of rise of on-state current after triggering Peak gate current Average gate power Storage temperature Operation junction temperature dI/dt IGM PG(AV) Tstg TVJ MT1(-),MT2(+),G(+)； MT1(-),MT2(+),G(-)； MT1(+),MT2(-),G(-) 50 A/μs 2A 0.1 W -40~150 ℃ -40~125 ℃ ：201510B 2/6 R 3FT1T3 ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, gate open Peak on-state voltage VTM ITM=5A Min Typ Max Unit - - 0.5 mA - 1.4 1.7 V MT1(-),MT2(+),G(+) 5 mA Gate trigger current IGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) 5 mA 5 mA Gate trigge...