3FT1T1

R TRIACS 3FT1T1 MAIN CHARACTERISTICS Package IT(RMS) VDRM IGT 0.8A 600V/800V 5mA APPLICATIONS Pin 1 2 3 Description 1 MT1 G 2 MT2 z z z AC switching z Phase control TO-92 FEATURES z ， z Glass-passivated mesa chip for reliability and uniform z z RoHS z Low on-state voltage and High ITSM z RoHS products ORDER MESSAGES Order code Marking 3FT1T1-O-T-N-C 3FT1T1 Package TO-92 Packaging Bag ABSOLUTE RATINGS (TC=25℃) Parameter Symbol Condition Repetitive peak off-state voltage VDRM On-state RMS current IT(RMS) full sine wave Non- full sine wave ,t=20ms repetitive surge peak on-state current ITSM full sine wave ,t=16.7ms I2t t=10ms Repetitive rate of rise of on-state current after triggering dI/dt Peak gate current Average gate power Storage temperature Operation junction temperature IGM PG(AV) Tstg TVJ over any 20ms period Value Unit ±600 ±800 V 0.8 A 9A 9.5 A 0.45 A2s 20 A/μs 1A 0.1 W -40~150 ℃ 125 ℃ ：201510B 1/5 R 3FT1T1 ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, gate open Peak on-state voltage VTM ITM=2A Min Typ Max Unit - - 0.1 mA - 1.6 1.75 V Gate trigger current MT1(-),MT2(+),G(+) IGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) MT1(+),MT2(-),G(+) 5 12 mA mA mA mA MT1(-),MT2(+),G(+) - - 1.5 V Gate trigger voltage Holding current VGT VDM=12V, ...