3DG9013

NPN NPN EPITAXIAL SILICON TRANSISTOR R 3DG9013 MAIN CHARACTERISTICS Package IC VCEO PC 500mA 20V 625mW APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG9012 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG9012 z RoHS product TO-92 ORDER MESSAGE Order codes Marking 3DG9013-O-T-N-C 3DG9013-O-T-N-A 9013 9013 Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201504A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Junction Temperature Storage Temperature 3DG9013 Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 40 20 5 500 625 150 -55~+150 Unit V V V mA mW ℃ ℃ ElECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=100uA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=25V, IE=0 VEB=3V, IC=0 40 20 5 - hFE VCE(sat) VCE =1V, IC=50mA VCE =1V, IC=500mA IC=500mA, IB=50mA 60 40 - VBE(sat) fT IC=500mA, IB=50mA VCE=5V, IC=10mA 100 Value(typ) Value(max) ---- 100 - 100 170 210 0.6 1.2 - Unit V V V nA nA V V MHz THERMAL CHARACTERISTIC Parameter TO-92 Thermal Resistance Junction Ambient TO-92 Symbol Value(min) Value(max) Unit Rth(j-a) - 200 ℃/W ：201504A 2/5 HFE VBESAT R ELECTRICAL CHARACTERISTICS (c...