ACE7407A
P-Channel Enhancement Mode MOSFET
Description The ACE7407A is the P-Channel logic enhancement mode power field ...
ACE7407A
P-Channel Enhancement Mode MOSFET
Description The ACE7407A is the P-Channel logic enhancement mode power field effect
transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features
-20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
VER 1.1 1
ACE7407A
P-Channel Enhancement Mode MOSFET
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
VGSS ±12 V
Continuous
Drain
Current
(TJ=150℃)
TA=25℃ TA=70℃
ID
-2.3 A
-1.7
Pulsed Drain Current
IDM -6 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
TJ TSTG RθJA
-1.4 A 0.33
W 0.21 -5...