ACE7401B

ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-30V  ID=-29A (VGS=-10V)  RDS(ON)＜13mΩ (VGS=-20V)  RDS(ON)＜14mΩ (VGS=-10V)  RDS(ON)＜17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) TA=25 OC TA=100 OC Drain Current (Pulse)C Drain Current (Continuous) TA=25 OC TA=75 OC Power Dissipation B TA=25 OC TA=100 OC Power Dissipation A TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDSS -30 V VGSS ±25 V -29 ID -23 IDM -60 A -12 IDSM -9.7 PD PDSM 29 12 W 3.1 2 TJ,TSTG -55 to 150 OC Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t≦10s Maximum Junction-to-Ambient AD Steady-State RθJA 30 40 60 75 OC/W Maximum Junction-to-Lead Steady-State RθJL 3.5 4.2 VER 1.2 1 Packaging Type DFN3*3-8L ACE7401B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE7401B XX + H Halogen - free Pb - free NN : DFN3*3-8L Electrical Characteristics TA=25 OC unless otherwise noted Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Diode Forward Voltage Maxi...