1N8024-GA

1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.5 A QC = 6 nC PIN 1 PIN 2 PIN 3 NC 123 TO – 257 (Isolated Base-plate Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  Industry’s lowest device capacitance  Ideal for output switching of power supplies  Best in class reverse leakage current at operating temperature Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar Inverters  Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value Power dissipation Operating...