BT131

R TRIACS BT131 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 1A 600V or 800V 5mA z z APPLICATIONS z AC switching z Phase control Package Pin 1 2 3 Description 1 MT1 G 2 MT2 TO-92 FEATURES z ， z z RoHS z Planar chip for reliability and uniform z Low on-state voltage and High ITSM z RoHS products ORDER MESSAGES Order code Marking BT131-O-T-N-C BT131 Package TO-92 Packaging Bag ：201510F 1/6 R ABSOLUTE RATINGS (TC=25℃) Parameter Symbol Condition Repetitive peak off-state voltage VDRM On-state RMS current Nonrepetitive surge peak on-state current IT(RMS) ITSM I2t full sine wave full sine wave ,t=20ms full sine wave ,t=16.7ms t=10ms Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operation junction temperature dI/dt IGM VGM PGM PG(AV) Tstg TVJ ITM=1.5A, IG=0.2A, dIG/dt=0.2A/μs over any 20ms period BT131 Value Unit ±600 ±800 V 1A 12.5 A 13.8 1.28 A A2s 50 A/μs 2A 5V 5W 0.5 W -40~150 ℃ 125 ℃ ：201510F 2/6 R BT131 ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, gate open Peak on-state voltage VTM ITM=2A Min Typ Max Unit - 0.1 0.5 mA - 1.2 1.5 V MT1(-),MT2(+),G(+) - 0.4 5 mA Gate trigger current IGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) - 1.3 1.4 5 5 mA mA MT1(+),...