2SK1582

SMD Type ■ Features ● VDS (V) = 30V ● ID = 0.2 A ● RDS(ON) ＜ 5Ω (VGS = 4V) ● RDS(ON) ＜ 3Ω (VGS = 10V) N-Channel MOSFET 2SK1582 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 0-0.1 +0.10.38 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Ta = 25℃ Junction Temperature Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Tstg Rating 30 ±20 200 400 200 150 -55 to 150 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cut-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) gFS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=250μA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V VDS=5 V ID=1uA VGS=4V, ID=10m A VGS=10V, ID=10m A VDS=5V, ID=10m A VGS=0V, VDS=5V, f=1MHz VGS(on)=5V, VDS=5V, ID=10mA, RL=500Ω,RG=10Ω Min Typ Max Unit 30 V 1 uA ±1 uA 0.8 1.8 V 5 Ω 3 20 60 mS 28 30 pF 7 55 200 ns 180 250 ■ Marking Marking G15 www.kexin.com.cn 1 SMD Type ■ Typical Charac...