2SJ210

SMD Type MOSFET MOS Fied Effect Transistor 2SJ210 Features Directly driven by Ics having a 5V poer supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage VDS=0 Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 200 400 200 150 -55 to +150 Unit V V mA mA mW 0-0.1 +0.10.38 -0.1 1.B1aGseATE 2.2EmSiOtteUrRCE 3.3coDlleRctAorIN Symbol Testconditons IDSS VDS=-60V,VGS=0 IGSS VGS= 20V,VDS=0 VGS(off) VDS=-5.0V,ID=-1 A Yfs VDS=-5.0V,ID=-10mA VGS=-4.0V,ID=-10mA RDS(on) VGS=-10V,ID=-10mA Ciss Coss VDS=-5.0V,VGS=0,f=1MHZ Crss td(on) tr td(off) VGS(on)=-4V,RG=10 ,VDD=-5V,ID=10mA RL=500 tf Min Typ Max Unit -10 A 10 A -1.4 -1.8 -2.4 V 20 45 ms 10 15 6 10 27 pF 21 pF 3 pF 120 ns 190 ns 150 ns 180 ns Marking Marking...