DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ210
P-CHANNEL MOSFET FOR SWITCHING
The 2SJ210, P-channel vertical type MOSFET...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ210
P-CHANNEL MOSFET FOR SWITCHING
The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
The 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.
FEATURES
Directly driven by the output of ICs having a 5 V power source. Not necessary to consider driving current because of its high
input impedance. Possible to reduce the number of parts by omitting the bias
resistor.
2.9 ±0.2 0.95 0.95
PACKAGE DRAWING (Unit: mm)
+0.1 –0.05
2.8 ±0.2 1.5
0.65
+0.1 –0.15
0.4
+0.1 –0.05
2
3
1 Marking
0.4
+0.1 –0.06
1.1 to 1.4 0.3
0.16
ORDERING INFORMATION
PART NUMBER 2SJ210
Marking: H16
PACKAGE SC-59 (Mini Mold)
0 to 0.1
1. Source 2. Gate 3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Drain Current (pulse) Note
Total Power Dissipation
VGSS ID(DC) ID(pulse)
PT
m20 m200 m400 200
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V V mA mA mW °C °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a...