2SJ210C

Preliminary Data Sheet 2SJ210C P-CHANNEL MOSFET FOR SWITCHING R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features  Directly driven by a 4.5 V power source.  Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2  MAX. (VGS = -4.5 V, ID = -50 mA) Ordering Information Part Number Lead Plating Packing Package 2SJ210C-T1B-A/AT -A : Sn-Bi , -AT : Pure Sn 3000p/Reel SC-59 (3pMM) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XG Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature Note PW  10 s, Duty Cycle  1% VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -60 ∓20 ∓200 ∓800 200 150 55 to 150 V V mA mA mW C C R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Page 1 of 6 2SJ210C Electrical Characteristics (TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage Not...