15N06

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch regulators ·Switching converters motor drivers and relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±15 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 15N06 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-voltage IS= 14A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 5V; ID= 7.5A IGSS Gate-Body Leakage Current VGS= ±15V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time VGS=5V; RGS=50Ω ID=7.5A; VDD=25V; 15N06 MIN TYPE MAX UNIT 60 V...