CoolMOS Power MOSFET
IXKH 24N60C5 IXKP 24N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gat...
Description
IXKH 24N60C5 IXKP 24N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
Preliminary data
ID25 = 24 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
D TO-247 AD (IXKH)
G S
G D S
TO-220 AB (IXKP)
q D(TAB)
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 7.9 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings 600 V ± 20 V
24 A 16 A 522 mJ 0.79 mJ 50 V/ns
Symbol
RDSon VGS(th) IDSS
IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 12 A VDS = VGS; ID = 0.79 mA VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz
TVJ = 25°C TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω
150
2.5 3
10
2000 100 40 9 13 12 5 50 5
165 mΩ
3.5 V
1 µA µA
100 nA
pF pF
52 nC nC nC
ns ns ns ns
0.5 K/W
G D S
Features
fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
Enhanced total power density
Applications
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating PDP and LCD adapter
1) CoolMOS™ is a trademark of Infineon Technologies AG....
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