IXKP 13N60C5M
CoolMOS™ 1) Power MOSFET
Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
Preliminary data
D
G S
ID25 = 6.5 A
VDSS
= 600 V
R =DS(on) max 0.3 Ω
TO-220 FP
G D
S
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions TVJ = 25°C
TC = 25°C TC = 90°C
single pulse repetitive
ID = 4.4 A...
