DMG4N60SK3

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS (@ TJ Max) 650V RDS(ON) Max 2.3Ω @ VGS = 10V ID TC = +25°C 3.7A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Motor controls  Backlighting  DC-DC converters  Power management functions Features  100% Unclamped Inductive Switch (UIS) Test in Production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: TO252  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.33 grams (Approximate) D TO252 Top View Ordering Information (Note 4) D G S Top View Pin Out Internal Schematic Notes: Part Number DMG4N6...