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RB481K

JCET

SCHOTTKY BARRIER DIODE

RB481K JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encap sulate Diodes SCHOTTLKY BARRIER DIODE...


JCET

RB481K

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RB481K JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encap sulate Diodes SCHOTTLKY BARRIER DIODE SOT-353 FEATURES z Low current rectification z High reliability MARKING: 3U 54 123 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Peak reverse voltage DC reverse Non-repetitive Peak Forward Surge Current @t=8.3ms Mean rectifying current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VR IFSM IO Pd RθJA Tj Tstg Limit 30 30 1 0.2 150 667 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Symbol Min Typ Max Unit 0.28 0.33 VF V 0.43 0.5 IR 30 μA Unit V V A A mW ℃/W ℃ ℃ Conditions IF=1mA IF=10mA IF=100mA IF=200mA VR=10V www.cj-elec.com 1 E,Mar,2016 Typical Characteristics FORWARD CURRENT I (mA) F T a =100 ℃ Forward Characteristics 200 100 10 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE V (V) F Capacitance Characteristics 45 T =25℃ a f=1MHz 36 27 18 9 0 0 5 10 15 20 REVERSE VOLTAGE V (V) R T a =25℃ REVERSE CURRENT I (uA) R Reverse Characteristics 1000 T =100 ℃ a 100 10 T =25 ℃ a 1 0.1 0 10 20 30 REVERSE VOLTAGE V (V) R Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T (℃) a CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D www.cj-elec.com 2 E,Mar,2016 SOT-353 Package Outline Dimensions SOT-353 Suggested Pad Layout Symbol A A1 A2 b c D E E1 e e1 L ...




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