MURF30020

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 50 V to 200 V VRRM Not ESD Sensitive MURF30005 thru MURF30020R VRRM = 50 V - 200 V IF(AV) = 300 A TO-244 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURF30005(R) MURF30010(R) MURF30020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MURF30005(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery time (per leg) Thermal characteristics Maximum thermal resistance, junction - case (per leg) IF(AV) TC = 140 °C IFSM tp = 8.3 ms, half sine VF IFM = 150 A, Tj = 25 °C Tj = 25 °C IR Tj = 125 °C Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A RΘJC 300 2750 1.0 25 3 100 0.40 MURF30010(R) 300 2750 1.0 25 3 100 0.40 MURF30020(R) Unit 300 A 2750 A 1.0 V 25 μA 3 mA 100 nS 0.40 °C/W www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURF30005 thru MURF30020R www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 M...