2SK3469-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadow...
2SK3469-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Applications Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500 V
Continuous drain current
ID
±12 A
Pulsed drain current
ID(puls]
±48 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
12 A
Maximum Avalanche Energy
EAS *1
217 mJ
Maximum Drain-Source dV/dt
dVDS/dt
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C Tc=25°C
2.16 50
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=2.77mH, Vcc=50V *2 Tch<=150°C *3 IF<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
Turn-off time toff
Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time R...
