Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
7N60A
·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
600 ±20
7
V V A
ID(puls)
Pulse Drain Current
28 A
Ptot Total Dissipation@TC=25℃
60 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.25 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
7N60A
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
VGS= 0; ID=1mA VDS= VGS; ID=250µA IS=3.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
VGS= 10V; ID=3.5A VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
MIN TYPE MAX UNIT 600 V 2.0 4.0 V
1.4 V 1.2 Ω ±100 nA 20 µA
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
.