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6N80

nELL

N-Channel Power MOSFET

SEMICONDUCTOR 6N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (6A, 800Volts) The ...


nELL

6N80

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Description
SEMICONDUCTOR 6N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (6A, 800Volts) The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 2.00Ω @ VGS = 10V Ultra low gate charge(88nC max.) Low reverse transfer capacitance (CRSS = 57pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (6N80A) GDS TO-220F (6N80AF) D (Drain) G (Gate) PRODUCT SUMMARY ID (A) 6 VDSS (V) 800 RDS(ON) (Ω) 2.00 @ VGS = 10V QG(nC) max. 88 S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) IAR=6A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) IAS=6A, L=25mH dv/dt Peak diode recovery dv/dt(Note 3) TO-220AB PD Total power dissipation (Derate above 25°C) TC=25°C TO-220F TJ Ope...




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