Document
Standard Power MOSFET
IXTH / IXTM 6N80 IXTH / IXTM 6N80A
N-Channel Enhancement Mode
V DSS
I
D25
R DS(on)
800 V 6 A 1.8 Ω
800 V 6 A 1.4 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM ID25 IDM PD TJ TJM Tstg M
d
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
800 V 800 V
±20 V ±30 V
6A 24 A
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 3 mA
V DS
=
V, GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
V = 10 V, I = 0.5 I GS D D25
6N80 6N80A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
800 2
V 4.5 V
±100 nA
250 µA 1 mA
1.8 Ω 1.4 Ω
TO-247 AD (IXTH)
TO-204 AA (IXTM)
D (TAB)
G = Gate, S = Source,
G
D = Drain, TAB = Drain
Features
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH)
- easy to drive and to protect l Fast switching times
Applications
l Switch-mode and resonant-mode power supplies
l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
l Space savings l High power density
IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved
91542E(5/96)
1-4
IXTH 6N80 IXTM 6N80
IXTH 6N80A IXTM 6N80A
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
46
2800 250 100
S
pF pF pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 RG = 2 Ω, (External)
35 100 40 110 100 200 60 100
ns ns ns ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
110 130 15 30 50 70
nC nC nC
0.7 K/W 0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
6A 24 A 1.5 V
900 ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Min. Max.
A 4.7 5.3 A 2.2 2.54
1
A 2.2 2.6 2
b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26
e 5.20 5.72 L 19.81 20.32 L1 4.50
∅ P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
TO-204AA (IXTM) Outline
© 2000 IXYS All rights reserved
Pins
1 - Gate
2 - Source
Case - Drain
Dim. Millimeter Min. Max.
A 6.4 11.4 A1 3.42 ∅ b .97 1.09 ∅ D 22.22 e 10.67 11.17 e1 5.21 5.71
L 7.93
∅ p 3.84 4.19 ∅p1 3.84 4.19 q 30.15 BSC
R 13.33 R1 4.77
s 16.64 17.14
Inches Min. Max. .250 .450
.135 .038 .043
.875
.420 .440 .205 .225
.312
.151 .165 .151 .165 1.187 BSC
.525 .188
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
ID - Amperes
RDS(on) - Ohms
Fig. 1 Output Characteristics
9
8 TJ = 25°C
7
6
5
4
3
2
1
0 0 5 10
VGS = 10V
15 20
VDS - Volts
7V
6V
25 30
Fig. 3 RDS(on) vs. Drain Current
3.0
TJ = 25°C
2.8
2.6
2.4
VGS = 10V
2.2
VGS = 15V
2.0
1.8 0 2 4 6 8 10 ID - Amperes
Fig. 5 Drain Current vs. Case Temperature
7
6 6N80A
5 4 6N80
3
2
1
0 -50 -25 0 25 50 75 100 125 150
TC - Degrees C
ID - Amperes
© 2000 IXYS All rights reserved
BV/VG(th) - Normalized
RDS(on) - Normalized
ID - Amperes
IXTH 6N80 IXTM 6N80
IXTH 6N80A IXTM 6N80A
Fig. 2 Input Admittance
9 8 7 6 5
TJ = 25°C
4 3 2 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50 1.25
ID = 2.5A
1.00
0.75
0.50 -50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
BVCES
1.1
VGS(th)
1.0
0.9
0.8
0.7
0.6
0.5 -50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4
IXTH 6N80 IXTM 6N80
IXTH 6N80A IXTM 6N80A
VGE - Volts
Capacitance - pF
Fig.7 Gate Charge Characteristic Curve
10 9 VDS = 500V 8 ID = 3.0A
IG = 10mA
7 6 5 4 3 2 1 0
0 10 20 30 40 50 60 70 80
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
2750 2500 2250 2000 1750 1500 1250 1000
750 500 250
0 0
Ciss
f = 1 MHz VDS = 25V
Coss Crss
5 10
15
VCE - Volts
20
25
ID - Amperes
ID - Amperes
Fig.8 Forward Bias Saf.