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IXTM6N80A Dataheets PDF



Part Number IXTM6N80A
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTM6N80A DatasheetIXTM6N80A Datasheet (PDF)

Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg M d Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 800 V 800 V ±20 V.

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Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg M d Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 800 V 800 V ±20 V ±30 V 6A 24 A 180 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA V DS = V, GS I D = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C V = 10 V, I = 0.5 I GS D D25 6N80 6N80A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 800 2 V 4.5 V ±100 nA 250 µA 1 mA 1.8 Ω 1.4 Ω TO-247 AD (IXTH) TO-204 AA (IXTM) D (TAB) G = Gate, S = Source, G D = Drain, TAB = Drain Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Supplies (UPS) l DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) l Space savings l High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 91542E(5/96) 1-4 IXTH 6N80 IXTM 6N80 IXTH 6N80A IXTM 6N80A Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 • ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 46 2800 250 100 S pF pF pF VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 RG = 2 Ω, (External) 35 100 40 110 100 200 60 100 ns ns ns ns VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 110 130 15 30 50 70 nC nC nC 0.7 K/W 0.25 K/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 6A 24 A 1.5 V 900 ns TO-247 AD (IXTH) Outline 123 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A 2.2 2.54 1 A 2.2 2.6 2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅ P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-204AA (IXTM) Outline © 2000 IXYS All rights reserved Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅ b .97 1.09 ∅ D 22.22 e 10.67 11.17 e1 5.21 5.71 L 7.93 ∅ p 3.84 4.19 ∅p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 ID - Amperes RDS(on) - Ohms Fig. 1 Output Characteristics 9 8 TJ = 25°C 7 6 5 4 3 2 1 0 0 5 10 VGS = 10V 15 20 VDS - Volts 7V 6V 25 30 Fig. 3 RDS(on) vs. Drain Current 3.0 TJ = 25°C 2.8 2.6 2.4 VGS = 10V 2.2 VGS = 15V 2.0 1.8 0 2 4 6 8 10 ID - Amperes Fig. 5 Drain Current vs. Case Temperature 7 6 6N80A 5 4 6N80 3 2 1 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C ID - Amperes © 2000 IXYS All rights reserved BV/VG(th) - Normalized RDS(on) - Normalized ID - Amperes IXTH 6N80 IXTM 6N80 IXTH 6N80A IXTM 6N80A Fig. 2 Input Admittance 9 8 7 6 5 TJ = 25°C 4 3 2 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.00 1.75 1.50 1.25 ID = 2.5A 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 BVCES 1.1 VGS(th) 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 6N80 IXTM 6N80 IXTH 6N80A IXTM 6N80A VGE - Volts Capacitance - pF Fig.7 Gate Charge Characteristic Curve 10 9 VDS = 500V 8 ID = 3.0A IG = 10mA 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 Gate Charge - nCoulombs Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 Ciss f = 1 MHz VDS = 25V Coss Crss 5 10 15 VCE - Volts 20 25 ID - Amperes ID - Amperes Fig.8 Forward Bias Saf.


IXTH6N80A IXTM6N80A 6N80


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