Preliminary Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT Application: Power Factor Correction circuit
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package Trench gate and thin wafer technology (G7H series) Hig...
