Document
RJH65T14DPQ-A0
650V - 50A - IGBT Application: Induction Heating
Microwave Oven
Features
Optimized for current resonance application Low collector to emitter saturation voltage
VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
Data Sheet
R07DS1256EJ0110 Rev.1.10
Aug 31, 2018
4 123
1. Gate
G
2. Collector 3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25 C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES 650 V
Gate to emitter voltage Collector current
Collector peak current
Tc = 25 C Tc = 100 C
VGES IC Note1 IC Note1 iC(peak) Note1
30 100 50 180
V A A A
Collector to emitter diode Tc = 25 C
Forward current
Tc = 100 C
Collector to emitter diode forward peak current
IDF IDF iDF(peak) Note2
40 20 100
A A A
Collector dissipation
PC 250 W
Junction to case thermal impedance (IGBT)
j-c Note3
0.6
C/W
Junction to case thermal impedance (Diode)
j-cd Note3
1.33
C/W
Junction temperature
Tj Note4
175
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data.
R07DS1256EJ0110 Rev.1.10 Aug 31, 2018
Page 1 of 9
RJH65T14DPQ-A0
Electrical Characteristics
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Tail loss
Symbol ICES IGES
VGE(off) VCE(sat)
Min 4
Cies Coes Cres
Qg Qge Qgc td(on)
tr td(off)
tf Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal Etail
— — — — — —
— — — — — —
— — — — — — —
Typ 1.45
1750 69 34 80 15 35 38 30 125 115 1.3 1.2 2.5 38 30 130 135 1.45 1.45 2.90 560
Max 100 ±1
7 1.75
— — — — — —
— — — — — —
— — — — — — —
Unit A A V V
(Tc = 25 C)
Test Conditions VCE = 650 V, VGE = 0 V VGE = ±30 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 50 A, VGE = 15 V Note5
pF VCE = 25 V pF VGE = 0 V pF f = 1 MHz
nC VGE = 15 V nC VCE = 300 V nC IC = 50 A
ns VCC = 400 V ns VGE = 15 V ns IC = 50 A ns Rg = 10 mJ TC = 25 C mJ Inductive load
mJ
ns VCC = 400 V ns VGE = 15 V ns IC = 50 A ns Rg = 10 mJ TC = 150 C mJ Inductive load
mJ
J VCC = 300 V, VGE = 20 V IC = 50 A, Rg = 15 Tc = 125 C Current resonance circuit
C-E diode forward voltage
VECF
1.2
1.6 V IF = 20 A Note5
C-E diode reverse recovery time
trr 250 ns IF = 20 A diFdt = 300 As
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
3. Value at Tc = 25 C
4. Please use this device in the thermal conditions which the junction temperature does not exceed 175 C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 C.
5. Pulse test
R07DS1256EJ0110 Rev.1.10 Aug 31, 2018
Page 2 of 9
Collector Dissipation PC (W)
RJH65T14DPQ-A0
Main Characteristics
Collector Dissipation vs. Case Temperature
300
200
100
0 0 25 50 75 100 125 150 175 Case Temperature Tc (C)
Collector Current IC (A)
Maximum DC Collector Current vs. Case Temperature
120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 Case Temperature Tc (C)
Collector Current IC (A)
Maximum Safe Operation Area 1000
100 PW = 10 s 10
100 s
1
0.1
Tc = 25 C Single pulse Notes 6 0.01 1 10 100
1000
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Typical Transfer Characteristics 120
VCE = 10 V Pulse Test 90
60 150 C
Tc = 25 C 30
0 0 2 4 6 8 10 Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
120 Pulse T2est Tc = 25 C
90 15 V
10 V
9.0 V
Typical Output Characteristics
120 Pulse T2est Tc = 150 C
10 V 9.0 V
90 15 V
Collector Current IC (A)
Collector Current IC (A)
60 8.0 V
30
VGE = 7.0 V 0
012345 Collector to Emitter Voltage VCE (V)
60 8.0 V
30 VGE = 7.0 V
0 012345 Collector to Emitter Voltage VCE (V)
Notes: 6. This data is the designed value on Renesas’s measurement condition, Renesas recommends that operating conditions are designed according to a.