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RJH65T14DPQ-A0 Dataheets PDF



Part Number RJH65T14DPQ-A0
Manufacturers Renesas
Logo Renesas
Description IGBT
Datasheet RJH65T14DPQ-A0 DatasheetRJH65T14DPQ-A0 Datasheet (PDF)

RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven Features  Optimized for current resonance application  Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C Data Sheet R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 4 123 1. Gate G 2. Collector 3. Emitter 4. Coll.

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RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven Features  Optimized for current resonance application  Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C Data Sheet R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 4 123 1. Gate G 2. Collector 3. Emitter 4. Collector E Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 650 V Gate to emitter voltage Collector current Collector peak current Tc = 25 C Tc = 100 C VGES IC Note1 IC Note1 iC(peak) Note1 30 100 50 180 V A A A Collector to emitter diode Tc = 25 C Forward current Tc = 100 C Collector to emitter diode forward peak current IDF IDF iDF(peak) Note2 40 20 100 A A A Collector dissipation PC 250 W Junction to case thermal impedance (IGBT) j-c Note3 0.6 C/W Junction to case thermal impedance (Diode) j-cd Note3 1.33 C/W Junction temperature Tj Note4 175 °C Storage temperature Tstg –55 to +150 °C Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Page 1 of 9 RJH65T14DPQ-A0 Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Tail loss Symbol ICES IGES VGE(off) VCE(sat) Min   4  Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal Etail — — — — — —  — — — — — —  — — — — — — — Typ    1.45 1750 69 34 80 15 35 38 30 125 115 1.3 1.2 2.5 38 30 130 135 1.45 1.45 2.90 560 Max 100 ±1 7 1.75 — — — — — —  — — — — — —  — — — — — — — Unit A A V V (Tc = 25 C) Test Conditions VCE = 650 V, VGE = 0 V VGE = ±30 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 50 A, VGE = 15 V Note5 pF VCE = 25 V pF VGE = 0 V pF f = 1 MHz nC VGE = 15 V nC VCE = 300 V nC IC = 50 A ns VCC = 400 V ns VGE = 15 V ns IC = 50 A ns Rg = 10  mJ TC = 25 C mJ Inductive load mJ ns VCC = 400 V ns VGE = 15 V ns IC = 50 A ns Rg = 10  mJ TC = 150 C mJ Inductive load mJ J VCC = 300 V, VGE = 20 V IC = 50 A, Rg = 15  Tc = 125 C Current resonance circuit C-E diode forward voltage VECF  1.2 1.6 V IF = 20 A Note5 C-E diode reverse recovery time trr  250  ns IF = 20 A diFdt = 300 As Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% 3. Value at Tc = 25 C 4. Please use this device in the thermal conditions which the junction temperature does not exceed 175 C. Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 C. 5. Pulse test R07DS1256EJ0110 Rev.1.10 Aug 31, 2018 Page 2 of 9 Collector Dissipation PC (W) RJH65T14DPQ-A0 Main Characteristics Collector Dissipation vs. Case Temperature 300 200 100 0 0 25 50 75 100 125 150 175 Case Temperature Tc (C) Collector Current IC (A) Maximum DC Collector Current vs. Case Temperature 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Case Temperature Tc (C) Collector Current IC (A) Maximum Safe Operation Area 1000 100 PW = 10 s 10 100 s 1 0.1 Tc = 25 C Single pulse Notes 6 0.01 1 10 100 1000 Collector to Emitter Voltage VCE (V) Collector Current IC (A) Typical Transfer Characteristics 120 VCE = 10 V Pulse Test 90 60 150 C Tc = 25 C 30 0 0 2 4 6 8 10 Gate to Emitter Voltage VGE (V) Typical Output Characteristics 120 Pulse T2est Tc = 25 C 90 15 V 10 V 9.0 V Typical Output Characteristics 120 Pulse T2est Tc = 150 C 10 V 9.0 V 90 15 V Collector Current IC (A) Collector Current IC (A) 60 8.0 V 30 VGE = 7.0 V 0 012345 Collector to Emitter Voltage VCE (V) 60 8.0 V 30 VGE = 7.0 V 0 012345 Collector to Emitter Voltage VCE (V) Notes: 6. This data is the designed value on Renesas’s measurement condition, Renesas recommends that operating conditions are designed according to a.


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