RB751S-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for high speed switching and detection applications
Features ...
RB751S-40
SILICON EPITAXIAL PLANAR
SCHOTTKY BARRIER DIODE
for high speed switching and detection applications
Features Small surface mounting type Low reverse current and low forward voltage High reliability
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
D
Top View Marking Code: "D" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
VRM VR IO IFSM Tj Ts
Value 40 30 30 200 125
- 40 to + 125
Unit V V mA mA OC OC
Symbol VF IR CT
Typ. 2
Max. 0.37 0.5
-
Unit V µA pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
RB751S-40
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
A C
RB751S-40
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
∠ ALL ROUND
HE D
A
SOD-523
E bp
UNIT A b p C D E HE V
mm
0.70 0.60
0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75
1.7 1.5
0.1
∠
5O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International...
