NP60N06PDK
60 V – 60 A – N-channel Power MOS FET Application: Automotive
Data Sheet
R07DS1296EJ0200 Rev.2.00
May 24, 20...
NP60N06PDK
60 V – 60 A – N-channel Power MOS FET Application: Automotive
Data Sheet
R07DS1296EJ0200 Rev.2.00
May 24, 2018
Description
NP60N06PDK is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Outline
TO-263(MP-25ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Packing
NP60N06PDK-E1-AY *1 NP60N06PDK-E2-AY *1
Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type) Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package TO-263(MP-25ZP)
R07DS1296EJ0200 Rev.2.00 May 24, 2018
Page 1 of 7
NP60N06PDK
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) 1*3 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current 2*3 Repetitive Avalanche Energy 2*3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR ...