Preliminary Data Sheet
NP60N04VLK
40 V – 60 A – N-channel Power MOS FET Application: Automotive
R07DS1246EJ0200 Rev.2....
Preliminary Data Sheet
NP60N04VLK
40 V – 60 A – N-channel Power MOS FET Application: Automotive
R07DS1246EJ0200 Rev.2.00
May 24, 2018
Description
The NP60N04VLK is N-channel MOS Field Effect
Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.9 m MAX. (VGS = 10 V, ID = 30 A)
Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP60N04VLK-E1-AY *1
Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP60N04VLK-E2-AY *1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-252 (MP-3ZP)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1*3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2*3 Repetitive Avalanche Energy *2*3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 20 60
240 105 1.2 175 –55 to +175 28 78
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) *3 Rth(ch-A) *3
1.43 125
°C/W °C/W
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 V 0 V *3 Not subject of production test. Ver...