NP120N04NUK

Preliminary Data Sheet NP120N04NUK 40 V – 120 A – N-channel Power MOS FET Application: Automotive R07DS1253EJ0100 Rev.1.00 Mar 30, 2015 Description The NP120N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.95 mΩ MAX. (VGS = 10 V, ID = 60 A) Low Ciss: Ciss = 8300 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP120N04NUK-S18-AY *1 Pure Sn (Tin) Tube 50 p/tube Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-262 (MP-25SK) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Tstg IAR EAR Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2 RG = 25 Ω, VGS = 20 V → 0 V Ratings 40 ±20 ±120 ±480 288 1.8 175 –55 to +175 66 435 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 °C/W 83.3 °C/W R07DS1253EJ0100 Rev.1.00 Mar 30, 2015 Page 1 of 6 NP120N04NUK Preliminary Electrical Characteristics (TA = ...