OPE5594A

GaAs Infrared Emitter C OPE5594A 8.7 5.7 7.7 5.0 1.3 Max The OPE5594S is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high reliability, high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. 24.0 Min 2.0 FEATURESC High-output powerC Narrow beam angle High reliability and long term stability Available for pulse operating C APPLICATIONSC Optical emitters Optical switches Smoke sensors IR remote control IR sound transmission 2- 0.5 2.5 Anode Cathode Tolerance : ±0.2mm STORAGE Condition : 5°C~35°C,R.H.60% Terms : within 3 months from production date Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C ) Item Symbol Rating Unit Power Dissipation PDC 150 Forward current Pulse forward current CCCʭ1C IFC IFPC 100 1.0 Reverse voltage VRC 5.0 Operating temp. Topr. -25~ +85 Soldering temp. CCCCCCCCCCCCCCʭ2 Tsol. 260. ʭ1.Duty ratio = 1/100, pulse width=0.1ms. ʭ2.Lead Soldering Temperature (2mm from ...