KEL5002A

Infrared Emitting Diode Description The KEL5002A is GaAlAs infrared emitting diode that is designed for high power, low forward voltage This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current. This device is packaged T13/4 package. Features 940nm wavelength Low forward voltage High power and high reliability Available for pulse operating AUK CORP. KEL5002A 12 Pin Connection 1. Anode 2. Cathode Applications IR Audio and Telephone IR communication Optical Switch Available for wireless digital data transmission Absolute Maximum Ratings Parameter Symbol Reverse Voltage Forward Current Power Dissipation Pulse Forward Current*1 Operating Temperature VR IF PD IFP Topr Storage Temperature Soldering Temperature*2 Tstg Tsol *1 : Pulse Width : Tw ≤ 100㎲, Periode : T = 10㎳ *2 : MAX 5s [TA = 25 ] Min. Max. Max. -5 V - 100 ㎃ - 170 ㎽ - 1.0 A -30 85 -30 100 - 260 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. Rating and Characteristic Curves Power dissipation Vs. Ambient temperature (㎽) 160 120 Power dissipation(PD) 80 40 0 0 20 40 60 80 100 (℃) Ambient temperature(Ta) (㎃) 100 Forward current Vs. Forward voltage Ta=25℃ Forward current(I F) 50 0 0 0.5 1.0 1.5 2.0 (V) Forward voltage(VF ) Radiant intensity(PO) KEL5002A Relativ...