DISCRETE SEMICONDUCTORS
DATA SHEET
BF851A; BF851B; BF851C N-channel junction FETs
Product specification File under Discr...
DISCRETE SEMICONDUCTORS
DATA SHEET
BF851A; BF851B; BF851C N-channel junction FETs
Product specification File under Discrete Semiconductors, SC07
1995 Apr 14
Philips Semiconductors
Philips Semiconductors
N-channel junction FETs
Product specification
BF851A; BF851B; BF851C
FEATURES High transfer admittance Low input capacitance Low feedback capacitance Low noise.
APPLICATIONS Preamplifiers for AM tuners in car radios.
handbook, half1pa2ge 3
g
MAM042
d s
DESCRIPTION
N-channel symmetrical junction field effect
transistors in a SOT54 (TO-92) package.
PINNING - SOT54 (TO-92)
PIN SYMBOL
DESCRIPTION
1 g gate
2 s source
3 d drain
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS drain-source voltage (DC) IDSS drain current
BF851A
BF851B
BF851C
Ptot yfs
total power dissipation forward transfer admittance
BF851A
BF851B
BF851C
Ciss input capacitance Crss reverse transfer capacitance
CONDITIONS VGS = 0; VDS = 8 V
up to Tamb = 40 °C VGS = 0; VDS = 8 V
f = 1 MHz f = 1 MHz
MIN. MAX. UNIT − 25 V
2 6.5 mA 6 15 mA 12 25 mA − 400 mW
12 20 mS 16 25 mS 20 30 mS − 10 pF − 3 pF
1995 Apr 14
2
Philips Semiconductors
N-channel junction FETs
Product specification
BF851A; BF851B; BF851C
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS VGSO ...