2SK1622(L), 2SK1622(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device
Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. ...
