isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
350
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4
A
ID(puls)
Pulse Drain Current
16
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3
℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
4N35
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isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-Voltage
IS=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 350V; VGS= 0
4N35
MIN TYPE MAX UNIT
350
V
2.0
4.0
V
1.4
V
2.0
Ω
±100 nA
10
µA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio...