Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N90
·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.8Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
900 ±30
V V
ID Drain Current-Continuous
3A
IDM Drain Current-Single Plused
10 A
PD Total Dissipation @TC=25℃
75 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
1.67 ℃/W 62.5 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N90
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 3A ;VGS= 0 VGS= 10V; ID= 1.5A VGS= ±30V;VDS= 0 VDS=550V; VGS= 0
VDS=25V; VGS=0V; fT=1MHz
VGS=10V; ID=1.5A; VDD=450V; RL=4.7Ω
MIN TYPE MAX UNIT 900 V 3.0 4.5 V
1.6 V 4.8 Ω ±10 nA 1 µA 590 13 pF 63 7 18
ns 18 45
·
isc website:www.iscsemi.cn
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