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4N80 Dataheets PDF



Part Number 4N80
Manufacturers nELL
Logo nELL
Description N-Channel Power MOSFET
Datasheet 4N80 Datasheet4N80 Datasheet (PDF)

SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (4A, 800Volts) The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching appl.

  4N80   4N80


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SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (4A, 800Volts) The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 3.6Ω @ VGS = 10V Ultra low gate charge(25nC max.) Low reverse transfer capacitance (CRSS = 9pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (4N80A) GDS TO-220F (4N80AF) D (Drain) G (Gate) PRODUCT SUMMARY ID (A) 4 VDSS (V) 800 RDS(ON) (Ω) 3.6 @ VGS = 10V QG(nC) max. 25 S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) IAR=4A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) IAS=4A, L=57mH dv/dt Peak diode recovery dv/dt(Note 3) TO-220AB PD Total power dissipation (Derate above 25°C) TC=25°C TO-220F TJ Operation junction temperature TSTG TL Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw Note: 1.Repetitive rating: pulse width limited by junction temperature.. 2.IAS = 4A, VDD = 50V, L = 57mH, RGS = 25Ω, starting TJ=25°C. 3.ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C. 1.6mm from case VALUE 800 800 ±30 4 2.5 15.6 4 13 460 4.0 106 (0.85) 36 (0.29) -55 to 150 -55 to 150 300 10 (1.1) UNIT V A mJ V /ns W(W/°C) ºC lbf.in (N.m) www.nellsemi.com Page 1 of 8 SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient Min. TO-220AB TO-220F TO-220AB/TO-220F Typ. Max. 1.20 3.45 62.5 UNIT ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS Min. OFF CHARACTERISTICS V(BR)DSS Drain to source breakdown voltage ID = 250µA ,VGS = 0V ▲ ▲V(BR)DSS/ TJ IDSS Breakdown voltage temperature coefficient Drain to source leakage current ID = 250µA, VDS=VGS VDS=800V, VGS=0V VDS=640V, VGS=0V TC = 25°C TC=125°C IGSS Gate to source forward leakage current Gate to source reverse leakage current VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ON CHARACTERISTICS RDS(ON) VGS(TH) gfs Static drain to source on-state resistance Gate threshold voltage Forward transconductance (Note 1) ID =2A, VGS = 10V VGS=VDS, ID=250μA VDS=50V, ID=2A DYNAMIC CHARACTERISTICS CISS COSS Input capacitance Output capacitance VDS = 25V, VGS = 0V, f =1MHz CRSS Reverse transfer capacitance 800 3 SWITCHING CHARACTERISTICS td(ON) tr td(OFF) tf QG QGS QGD Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge (Miller charge) VDD = 400V, VGS = 10V, lD = 4A, RGS = 25Ω (Note 1, 2) VDD = 640V, VGS = 10V, ID = 4A (Note 1, 2) Typ. 0.95 2.5 3.8 680 75 9 16 45 35 35 19 4 9 Max. UNIT 10 100 100 -100 V V/ºC μA nA 3.6 Ω 5V S 880 100 pF 12 40 100 80 ns 80 25 nC SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT VSD Diode forward voltage ISD = 4A, VGS = 0V 1.4 V Is (IsD) Continuous source to drain current Integral reverse P-N junction diode in the MOSFET D (Drain) 4 ISM Pulsed source current trr Reverse recovery time Qrr Reverse recovery charge Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. G (Gate) S (Source) ISD = 4A, VGS = 0V, dIF/dt = 100A/µs 15.6 A 580 ns 3.7 µC www.nellsemi.com Page 2 of 8 SEMICONDUCTOR ORDERING INFORMATION SCHEME Current rating, ID 4 = 4A MOSFET series N = N-Channel Voltage rating, VDS 80 = 800V Package type A = TO-220AB AF = TO-220F 4N80 Series RRooHHSS Nell High Power Products 4 N 80 A Fig.1 On-region characteristics Fig.2 Transfer characteristics Drain current, lD (A) 101 100 VGS Top: 15 V 10 V 80 V 70 V 60 V Bottorm: 5.5 V 10-1 10-2 10-1 *Notes: 1.250µs Pulse test 2.Tc=25°C 100 101 Drain-to-Source voltage, VDS(V) Fig.3 On-resistance variation vs. drain current and gate voltage 7 6 5 VGS=10V 4 VGS=20V 3 *Note:TJ=25°C 2 0 2 4 6 8 10 Drain current, ID (A) Reverse Drain current, lDR(A) Drain current, lD (A) 101 100 10-1 2 150°C 25°C -55°C *Notes: 1.VDS=50V 2.250µs Pulse test 4 68 Gate-Source voltage, VGS (V) 10 Fig.4 Body diode forward voltage var.


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