Document
SEMICONDUCTOR
4N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(4A, 800Volts)
The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts.
They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications .
FEATURES
RDS(ON) = 3.6Ω @ VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance (CRSS = 9pF typical) Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (4N80A)
GDS
TO-220F (4N80AF)
D (Drain)
G (Gate)
PRODUCT SUMMARY
ID (A)
4
VDSS (V)
800
RDS(ON) (Ω)
3.6 @ VGS = 10V
QG(nC) max.
25
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=4A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=4A, L=57mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ Operation junction temperature
TSTG TL
Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 4A, VDD = 50V, L = 57mH, RGS = 25Ω, starting TJ=25°C. 3.ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE 800 800 ±30 4 2.5 15.6 4 13 460 4.0
106 (0.85) 36 (0.29) -55 to 150 -55 to 150
300 10 (1.1)
UNIT V
A
mJ V /ns W(W/°C)
ºC lbf.in (N.m)
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Page 1 of 8
SEMICONDUCTOR
4N80 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
Min. TO-220AB TO-220F TO-220AB/TO-220F
Typ.
Max. 1.20 3.45 62.5
UNIT ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
▲ ▲V(BR)DSS/ TJ
IDSS
Breakdown voltage temperature coefficient Drain to source leakage current
ID = 250µA, VDS=VGS VDS=800V, VGS=0V VDS=640V, VGS=0V
TC = 25°C TC=125°C
IGSS
Gate to source forward leakage current Gate to source reverse leakage current
VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON) VGS(TH)
gfs
Static drain to source on-state resistance Gate threshold voltage Forward transconductance (Note 1)
ID =2A, VGS = 10V VGS=VDS, ID=250μA VDS=50V, ID=2A
DYNAMIC CHARACTERISTICS
CISS COSS
Input capacitance Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
800 3
SWITCHING CHARACTERISTICS
td(ON) tr
td(OFF)
tf QG QGS QGD
Turn-on delay time Rise time Turn-off delay time
Fall time Total gate charge Gate to source charge Gate to drain charge (Miller charge)
VDD = 400V, VGS = 10V, lD = 4A, RGS = 25Ω (Note 1, 2)
VDD = 640V, VGS = 10V, ID = 4A (Note 1, 2)
Typ.
0.95
2.5 3.8 680 75 9
16 45 35 35 19 4 9
Max. UNIT
10 100 100 -100
V V/ºC μA
nA
3.6 Ω 5V
S
880 100 pF 12
40 100 80 ns
80
25 nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 4A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction diode in the MOSFET D (Drain)
4
ISM Pulsed source current
trr Reverse recovery time Qrr Reverse recovery charge Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature.
G (Gate)
S (Source)
ISD = 4A, VGS = 0V, dIF/dt = 100A/µs
15.6
A
580 ns 3.7 µC
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Page 2 of 8
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID 4 = 4A MOSFET series N = N-Channel Voltage rating, VDS 80 = 800V Package type A = TO-220AB AF = TO-220F
4N80 Series RRooHHSS
Nell High Power Products
4 N 80 A
Fig.1 On-region characteristics
Fig.2 Transfer characteristics
Drain current, lD (A)
101 100
VGS
Top: 15 V 10 V 80 V 70 V
60 V Bottorm: 5.5 V
10-1
10-2 10-1
*Notes: 1.250µs Pulse test 2.Tc=25°C
100 101
Drain-to-Source voltage, VDS(V)
Fig.3 On-resistance variation vs. drain current and gate voltage
7
6
5 VGS=10V
4 VGS=20V
3 *Note:TJ=25°C
2 0 2 4 6 8 10 Drain current, ID (A)
Reverse Drain current, lDR(A)
Drain current, lD (A)
101
100
10-1 2
150°C
25°C
-55°C
*Notes: 1.VDS=50V 2.250µs Pulse test
4 68 Gate-Source voltage, VGS (V)
10
Fig.4 Body diode forward voltage var.