N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3N50
3A, 500V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 3N50 is an N-ch...
Description
UNISONIC TECHNOLOGIES CO., LTD 3N50
3A, 500V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 3N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON)=3.2Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested
SYMBOL
2.Drain
1
TO-220F
1
TO-252
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3N50L-TF3-T
3N50G-TF3-T
3N50L-TN3-R
3N50G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F TO-252
Pin Assignment 123 GDS GDS
Packing
Tube Tape Reel
www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-530.C
3N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
500 V ±30 V
Drain Current
Continuous (TC=25°C) Pulsed (Note 2)
Avalanche Current (Note 2)
ID IDM IAR
3 (Note 5) 12 (Note 5)
3
A A A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 4)
Peak Diode Recovery dv/dt (Note 4)
EAS EAR dv/dt
200 mJ 6.2 mJ 4.5 V/ns
...
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