2SK2117

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 7 A ID(puls) Pulsed Drain Current 28 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ · 2SK2117 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2117 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS= 7.0A;VGS= 0 VGS= 10V; ID= 4.0A VGS= ±30V;VDS= 0 VDS= 400V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz ID=4A; VDD=10V; RL=7.5Ω MIN TYPE MAX UNIT 500 V 2.0 3.0 V 0.95 V 0.7 0.9 Ω ±10 µA 250 µA 1050 40 pF 280 55 15 ns 40 95 NOTICE： ISC reserves the rights to make ch...