isc N-Channel MOSFET Transistor
2SK2082-01
DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 90...
isc N-Channel MOSFET
Transistor
2SK2082-01
DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·UPS ·DC-DC Converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
9
A
ID(puls)
Pulsed Drain Current
36
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.833 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
35
℃/W
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isc N-Channel Mosfet
Transistor
2SK2082-01
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward on-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr
Rise Time
td(on) Turn-on Delay Time
tf
Fall Time
td(off) Turn-off Delay Time
CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IF= 2IDR ;VGS= 0 VGS= 10V; ID= 4.5A VGS= ±30V;VDS=...