Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s Features
q High foward current ...
Power
Transistors
2SA1499
Silicon
PNP epitaxial planar type
For high-speed switching
s Features
q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with
one screw.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–400 –400 –7 –1.2 – 0.6 25
2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
5.08±0.5 123
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current Emitter cutoff current
ICBO VCB = –400V, IE = 0 IEBO VEB = –7V, IC = 0
–100 –100
µA µA
Collector to emitter voltage Forward current transfer ratio
VCEO hFE1* hFE2
IC = –10mA, IB = 0 VCE = –5V, IC = –100mA VCE = –5V, IC = –300mA
–400 30 10
V 160
Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat)
IC = –300mA, IB = –60mA IC = –300mA, IB = –60mA
–1.0 V –1.2 V
Transition frequency Turn-on time Storage time Fall time
fT VCE = –10V, IC...